quad complimentary transistors semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9205 issue 1 page 1 of 3 MHQ6002 high speed saturated switching hermetic ceramic dual in line package. ideally suited for high speed switching and general purpose applications screening options available absolute maximum ratings (t a = 25c unless otherwise stated) per device total package v cbo collector ? base voltage 60v v ceo collector ? emitter voltage 30v v ebo emitter ? base voltage 5v i c continuous collector current 500ma p d total power dissipation at t a = 25c 650mw 1.9w derate above 25c 3.71mw/c 10.86mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties (each device) symbol parameters max. units r ja thermal resistance, junction to ambient 269.2 c/w
quad complimentary transistors MHQ6002 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9205 issue 1 page 2 of 3 electrical characteristics (each device, t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma i b = 0 30 v (br)cbo collector-base breakdown voltage i c = 10a i e = 0 60 v (br)ebo emitter-base breakdown voltage i e = 10a i c = 0 5 v i cbo collector cut-off current v cb = 50v i e = 0 20 i ebo emitter cut-off current v eb = 3v i c = 0 30 na i c = 150ma i b = 15ma 0.4 v ce(sat) (1) collector-emitter saturation voltage i c = 300ma i b = 30ma 1.4 i c = 150ma i b = 15ma 1.3 v be(sat) (1) base-emitter saturation voltage i c = 300ma i b = 30ma 2 v i c = 1.0ma v ce = 10v 25 i c = 10ma v ce = 10v 35 i c = 150ma v ce = 10v 40 h fe (1) forward-current transfer ratio i c = 300ma v ce = 10v 20 dynamic characteristics i c = 50ma v ce = 20v f t transition frequency f = 100mhz 300 mhz v cb = -10v i e = 0 npn 6 c obo output capacitance f = 1.0mhz pnp 4.5 v eb = -2v i c = 0 npn 20 c ibo input capacitance f = 1.0mhz pnp 17 pf i c = -150ma v cc = -30v t on turn-on time i b1 = -15ma 30 i c = -150ma v cc = -30v t off turn-off time i b1 = - i b2 = -15ma 225 ns notes notes notes notes (1) pulse width 300us, 2%
quad complimentary transistors MHQ6002 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9205 issue 1 page 3 of 3 mechanical data dimensions in inches pin 1 - collector 1 pin 14 - collector 4 pin 2 - base 1 pin 13 - base 4 npn pin 3 - emitter 1 pin 12 - emitter 4 pin 4 - no connection pin 11 - no connection pin 5 - emitter 2 pin 10 - emitter 3 pin 6 - base 2 pin 9 - base 3 pnp pin 7 - collector 2 pin 8 - collector 3 7 14 8 13 12 11 10 9 6 5 4 3 2 1
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